IndiumV3, Main, Repository, bibRecord, 002524

Spray pyrolysis deposition of indium sulphide thin films

Identifieur interne : 002524 ( Main/Repository ); précédent : 002523; suivant : 002525

Spray pyrolysis deposition of indium sulphide thin films

Auteurs : RBID : Pascal:11-0214449

Descripteurs français

Pascal (Inist)
- Pyrolyse, Indium, Couche mince, Dépôt projection, Solution aqueuse, Chlorure d'indium, Diffraction RX, Microscopie électronique balayage, Transmission optique, Spectre absorption, Spectre photoélectron RX, Spectrométrie dispersive, Réseau quadratique, Phase bêta, Sulfure d'indium, Oxyde d'indium, Recuit, Oxydation, Transparence, Epaisseur couche, Chlore, Dépendance température, Propriété optique, In, In2S3, InCl3, Substrat verre, In2O3, 8115R, 6855J, 7866.
Wicri :
- concept : Chlore.

English descriptors

KwdEn :
- Absorption spectra, Annealing, Aqueous solutions, Beta phase, Chlorine, Dispersive spectrometry, Indium, Indium chloride, Indium oxide, Indium sulfide, Layer thickness, Optical properties, Optical transmission, Oxidation, Pyrolysis, Scanning electron microscopy, Spray coatings, Temperature dependence, Tetragonal lattices, Thin films, Transparency, X-ray photoelectron spectra, XRD.

Abstract

In₂S₃ thin films were grown by the chemical spray pyrolysis (CSP) method using the pneumatic spray set-up and compressed air as a carrier gas. Aqueous solutions containing InCl₃ and SC(NH₂)₂ ata molar ratio of In/S = 1/3 and 1/6 were deposited onto preheated glass sheets at substrate temperatures T_s = 205-410 °C. The obtained films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM,) optical transmission spectra, X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). According to XRD, thin films deposited at T_s = 205-365 °C were composed of the (0012) orientated tetragonal β-In₂S₃ phase independent of the In/S ratio in the spray solution. Depositions performed at T_s=410 °C led to the formation of the In₂O₃ phase, preferably when the 1/3 solution was sprayed. Post-deposition annealing in air indicated that oxidation of the sulphide phase has a minor role in the formation of In₂O₃ at temperatures up to 450 °C. In₂S₃ films grown at T_s below 365 °C exhibited transparency over 70% in the visible spectral region and Eg of 2.90-2.96 eV for direct and 2.15-2.30 eV for indirect transitions, respectively. Film thickness and chlorine content decreased with increasing deposition temperatures. The XPS study revealed that the In/S ratio in the spray solution had a significant influence on the content of oxygen (Me-O, BE = 530.0 eV) in the In₂S₃ films deposited in the temperature range of 205-365 °C. Both XPS and EDS studies confirmed that oxygen content in the films deposited using the solution with the In/S ratio of 1/6 was substantially lower than in the films deposited with the In/S ratio of 1/3.

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Pascal:11-0214449

Le document en format XML

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<author><name sortKey="Otto, K" uniqKey="Otto K">K. Otto</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
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<author><name sortKey="Katerski, A" uniqKey="Katerski A">A. Katerski</name>
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<author><name sortKey="Mere, A" uniqKey="Mere A">A. Mere</name>
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<author><name sortKey="Volobujeva, O" uniqKey="Volobujeva O">O. Volobujeva</name>
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<author><name sortKey="Krunks, M" uniqKey="Krunks M">M. Krunks</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086, Tallinn</s2>
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<publicationStmt><idno type="inist">11-0214449</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0214449 INIST</idno>
<idno type="RBID">Pascal:11-0214449</idno>
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<idno type="wicri:Area/Main/Repository">002524</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Annealing</term>
<term>Aqueous solutions</term>
<term>Beta phase</term>
<term>Chlorine</term>
<term>Dispersive spectrometry</term>
<term>Indium</term>
<term>Indium chloride</term>
<term>Indium oxide</term>
<term>Indium sulfide</term>
<term>Layer thickness</term>
<term>Optical properties</term>
<term>Optical transmission</term>
<term>Oxidation</term>
<term>Pyrolysis</term>
<term>Scanning electron microscopy</term>
<term>Spray coatings</term>
<term>Temperature dependence</term>
<term>Tetragonal lattices</term>
<term>Thin films</term>
<term>Transparency</term>
<term>X-ray photoelectron spectra</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Pyrolyse</term>
<term>Indium</term>
<term>Couche mince</term>
<term>Dépôt projection</term>
<term>Solution aqueuse</term>
<term>Chlorure d'indium</term>
<term>Diffraction RX</term>
<term>Microscopie électronique balayage</term>
<term>Transmission optique</term>
<term>Spectre absorption</term>
<term>Spectre photoélectron RX</term>
<term>Spectrométrie dispersive</term>
<term>Réseau quadratique</term>
<term>Phase bêta</term>
<term>Sulfure d'indium</term>
<term>Oxyde d'indium</term>
<term>Recuit</term>
<term>Oxydation</term>
<term>Transparence</term>
<term>Epaisseur couche</term>
<term>Chlore</term>
<term>Dépendance température</term>
<term>Propriété optique</term>
<term>In</term>
<term>In2S3</term>
<term>InCl3</term>
<term>Substrat verre</term>
<term>In2O3</term>
<term>8115R</term>
<term>6855J</term>
<term>7866</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Chlore</term>
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<front><div type="abstract" xml:lang="en">In<sub>2</sub>
S<sub>3</sub>
 thin films were grown by the chemical spray pyrolysis (CSP) method using the pneumatic spray set-up and compressed air as a carrier gas. Aqueous solutions containing InCl<sub>3</sub>
 and SC(NH<sub>2</sub>
)<sub>2</sub>
 ata molar ratio of In/S = 1/3 and 1/6 were deposited onto preheated glass sheets at substrate temperatures T<sub>s</sub>
 = 205-410 °C. The obtained films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM,) optical transmission spectra, X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). According to XRD, thin films deposited at T<sub>s</sub>
 = 205-365 °C were composed of the (0012) orientated tetragonal β-In<sub>2</sub>
S<sub>3</sub>
 phase independent of the In/S ratio in the spray solution. Depositions performed at T<sub>s</sub>
=410 °C led to the formation of the In<sub>2</sub>
O<sub>3</sub>
 phase, preferably when the 1/3 solution was sprayed. Post-deposition annealing in air indicated that oxidation of the sulphide phase has a minor role in the formation of In<sub>2</sub>
O<sub>3</sub>
 at temperatures up to 450 °C. In<sub>2</sub>
S<sub>3</sub>
 films grown at T<sub>s</sub>
 below 365 °C exhibited transparency over 70% in the visible spectral region and Eg of 2.90-2.96 eV for direct and 2.15-2.30 eV for indirect transitions, respectively. Film thickness and chlorine content decreased with increasing deposition temperatures. The XPS study revealed that the In/S ratio in the spray solution had a significant influence on the content of oxygen (Me-O, BE = 530.0 eV) in the In<sub>2</sub>
S<sub>3</sub>
 films deposited in the temperature range of 205-365 °C. Both XPS and EDS studies confirmed that oxygen content in the films deposited using the solution with the In/S ratio of 1/6 was substantially lower than in the films deposited with the In/S ratio of 1/3.</div>
</front>
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<fA03 i2="1"><s0>Thin solid films</s0>
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<fA06><s2>10</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Spray pyrolysis deposition of indium sulphide thin films</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>OTTO (K.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KATERSKI (A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MERE (A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>VOLOBUJEVA (O.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KRUNKS (M.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5</s1>
<s2>19086, Tallinn</s2>
<s3>EST</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA20><s1>3055-3060</s1>
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<fA21><s1>2011</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
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<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>29 ref.</s0>
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<fA47 i1="01" i2="1"><s0>11-0214449</s0>
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<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In<sub>2</sub>
S<sub>3</sub>
 thin films were grown by the chemical spray pyrolysis (CSP) method using the pneumatic spray set-up and compressed air as a carrier gas. Aqueous solutions containing InCl<sub>3</sub>
 and SC(NH<sub>2</sub>
)<sub>2</sub>
 ata molar ratio of In/S = 1/3 and 1/6 were deposited onto preheated glass sheets at substrate temperatures T<sub>s</sub>
 = 205-410 °C. The obtained films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM,) optical transmission spectra, X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). According to XRD, thin films deposited at T<sub>s</sub>
 = 205-365 °C were composed of the (0012) orientated tetragonal β-In<sub>2</sub>
S<sub>3</sub>
 phase independent of the In/S ratio in the spray solution. Depositions performed at T<sub>s</sub>
=410 °C led to the formation of the In<sub>2</sub>
O<sub>3</sub>
 phase, preferably when the 1/3 solution was sprayed. Post-deposition annealing in air indicated that oxidation of the sulphide phase has a minor role in the formation of In<sub>2</sub>
O<sub>3</sub>
 at temperatures up to 450 °C. In<sub>2</sub>
S<sub>3</sub>
 films grown at T<sub>s</sub>
 below 365 °C exhibited transparency over 70% in the visible spectral region and Eg of 2.90-2.96 eV for direct and 2.15-2.30 eV for indirect transitions, respectively. Film thickness and chlorine content decreased with increasing deposition temperatures. The XPS study revealed that the In/S ratio in the spray solution had a significant influence on the content of oxygen (Me-O, BE = 530.0 eV) in the In<sub>2</sub>
S<sub>3</sub>
 films deposited in the temperature range of 205-365 °C. Both XPS and EDS studies confirmed that oxygen content in the films deposited using the solution with the In/S ratio of 1/6 was substantially lower than in the films deposited with the In/S ratio of 1/3.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15R</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H66</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Pyrolyse</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Pyrolysis</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Dépôt projection</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Spray coatings</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Solution aqueuse</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Aqueous solutions</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Chlorure d'indium</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Indium chloride</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Indio cloruro</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>XRD</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Transmission optique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Optical transmission</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Transmisión óptica</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Spectre absorption</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Absorption spectra</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Dispersive spectrometry</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Réseau quadratique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Tetragonal lattices</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Phase bêta</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Beta phase</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Fase beta</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Recuit</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Annealing</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Oxydation</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Oxidation</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Transparence</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Transparency</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Chlore</s0>
<s2>NC</s2>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Chlorine</s0>
<s2>NC</s2>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>34</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>34</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>35</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>35</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>In2S3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>InCl3</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>8115R</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="31" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>143</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:11-0214449
   |texte=   Spray pyrolysis deposition of indium sulphide thin films
}}

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Spray pyrolysis deposition of indium sulphide thin films

Spray pyrolysis deposition of indium sulphide thin films

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